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| BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS n n n n VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING Figure 1: Package APPLICATION n HIGH RUGGEDNESS ELECTRONIC IGNITIONS 2 3 1 3 2 1 DESCRIPTION The devices are bipolar Darlington transistors manufactured using Multi-Epitaxial Planar technology. They have been properly designed to be used in Automotive environment as electronic ignition power actuators. TO-218 ISOWATT218 Figure 2: Internal Schematic Diagram Table 1: Order Code Part Number BU941ZP BU941ZFI Marking BU941ZP BU941ZPFI Package TO-218 ISOWATT218 Packaging TUBE TUBE February 2005 Rev. 6 1/9 BU941ZP BU941ZPFI Table 2: Absolute Maximum Ratings Symbol VCEO VEBO IC ICM IB IBM Ptot Visol Tstg TJ Parameter BU941ZP Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at TC = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature -65 to 175 175 o Value BU941ZPFI 350 5 15 30 1 5 155 65 2500 -65 to 175 175 Unit Unit V V A A A A W V C C Table 3: Thermal Data TO-218 Rthj-case Thermal Resistance Junction-Case Max 0.97 ISOWATT218 2.3 Unit oC/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICEO IEBO VCL* (IB = 0) Emitter Cut-off Current (IC = 0 ) Clamping Voltage Saturation Voltage VBE(sat)* Base-Emitter Saturation Voltage hFE* DC Current Gain Functional Test INDUCTIVE LOAD ts tf VF Storage Time Fall Time IC = 100 mA IC = 8 A IC = 10 A IC = 12 A IC = 8 A IC = 10 A IC = 12 A IC = 5 A VCC = 24 V (see fig. 12) VCC = 12 V VBE(off) = 0 V VClamp = 300 V IB = 70 mA Diode Forward Voltage IF = 10 V * Pulsed: Pulsed duration = 300 s, duty cycle 1.5 %. IB =100 mA IB = 250 mA IB = 300 mA IB =100 mA IB = 250 mA IB = 300 mA VCE = 10 V L = 7 mH L = 7 mH RBE =47 W IC = 7 A (see fig. 14) 2.5 V 15 0.5 s s 300 10 A 350 500 1.8 1.8 2 2.2 2.5 2.7 V V V V V V V VCE(sat)* Collector-Emitter Parameter Collector Cut-off Current VCE = 300 V VCE = 300 V VEB = 5 V Tj = 125 C o Test Conditions Min. Typ. Max. 100 0.5 20 Unit A mA mA 2/9 BU941ZP BU941ZPFI Figure 3: Safe Operating Area Figure 6: Derating Curves Figure 4: DC Current Gain Figure 7: DC Current Gain Figure 5: Collector-Emitter Saturation Voltage Figure 8: Collector-Emitter Saturation Voltage 3/9 BU941ZP BU941ZPFI Figure 9: Base-Emitter Saturation Voltage Figure 11: Base-Emitter Saturation Voltage Figure 10: Collector-Emitter Saturation Voltage 4/9 BU941ZP BU941ZPFI Figure 12: Functional Test Circuit Figure 13: Functional Test Waveforms Figure 14: Switching Time Test Circuit 5/9 BU941ZP BU941ZPFI TO-218 (SOT-93) MECHANICAL DATA DIM. A C D D1 E F F3 F4 G H H1 L L2 L3 L4 L5 L6 Dia MIN. 4.70 1.17 mm. TYP MAX. 4.90 1.37 2.50 1.27 0.50 1.10 1.75 2.10 10.80 14.70 10.00 12.20 16.20 18.00 2.40 3.95 31.00 4.00 4.10 4.15 11.10 15.20 0.78 1.30 0016087 D 6/9 BU941ZP BU941ZPFI ISOWATT218 (option "B") MECHANICAL DATA DIM. A B C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R Dia MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 10.80 15.80 mm. TYP 2.5 MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.85 2.20 1.10 11.20 16.20 9 20.80 19.10 22.80 40.50 4.85 20.25 2.0 4.6 3.50 3.70 21.20 19.90 23.60 42.50 5.25 20.75 2.40 0016093B n 7/9 BU941ZP BU941ZPFI Table 5: Revision History Date 22-Apr-2002 09-Sep-2004 03-Feb-2005 Release 4 5 6 Change Designator Fourth Release Fifth Release Mechanical Data has been updated 8/9 BU941ZP BU941ZPFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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